Table 1. Photophysical data of 1–4 in doped and neat films.

Emitter a		λ PL b [nm]	E FWHM c [eV]	λ FWHM c [nm]	Φ PL d [%]	Φ p e [%]	Φ d e [%]	τ p f [ns]	τ d f [μs]	k r g [106 s–1]	k ISC h [108 s–1]	k RISC i [107 s–1]	ΔEST j [eV]
1	Dope	479	0.36	69	100	1.1	98.9	2.9	2.7	3.9	3.5	3.3	0.08
	Neat	469	0.34	62	74	0.6	73.4	0.95	2.3	6.1	10	5.4
2	Dope	483	0.35	68	100	1.4	98.6	3.4	5.3	4.1	2.9	1.3	0.06
	Neat	473	0.35	68	11	0.8	10.2	1.3	1.7	6.4	7.8	0.74
3	Dope	468	0.37	67	92	0.5	91.5	1.7	10.4	3.2	5.9	1.6	0.11
	Neat	464	0.32	57	83	0.7	82.3	0.95	3.2	7.0	10	3.9
4	Dope	476	0.37	70	92	0.8	91.2	1.7	1.9	4.7	5.9	5.9	0.11
	Neat	465	0.46	85	23	0.4	22.6	0.54	1.8	6.6	18	3.6

^aMeasured as a 50 wt% doped thin film in a PPF host matrix (Dope) or pure neat film (Neat) at 300 K under N₂.

^bPL emission maximum.

^cFull width at half-maximum of the PL spectrum given in energy or wavelength.

^dAbsolute PL quantum yield evaluated using an integrating sphere from overall QA and QE emissions.

^eFractional quantum yields for prompt fluorescence (Φ_p) and delayed fluorescence (Φ_d): Φ_p + Φ_d = Φ_PL.

^fEmission lifetimes for prompt fluorescence (τ_p) and delayed fluorescence (τ_p).

^gRate constant of fluorescence radiative decay (S₁ → S₀): k_r = Φ_p/τ_p.

^hRate constant of ISC (S₁ → T₁): k_ISC = (1 – Φ_p)/τ_p.

ⁱRate constant of RISC (T₁ → S₁): k_RISC = Φ_d/(k_ISCτ_pτ_dΦ_p).

^jSinglet–triplet energy splitting determined from the lowest excited singlet (E_S) and triplet (E_T) energies by ΔE_ST = E_S – E_T (see ESI).