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. 2020 Mar 13;11:1391. doi: 10.1038/s41467-020-15159-2

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Typical P–V loop (2.5 kHz) of the Hf_0.5Zr_0.5O₂ (HZO) film derived from positive-up negative-down (PUND) measurements. b STEM-BF image of the TiN/HZO/TiN stack. Scale bars, 10 nm. c STEM-HAADF image of the HZO thin film with two specific crystal grains, projected along o [ $0 \bar{1} 1$ ] (left square) and m [ $0 \bar{1} 1$ ] (right square) zone axes. Scale bars, 5 nm. Scale bar inset, 0.5 nm.