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. 2020 Mar 13;11:1391. doi: 10.1038/s41467-020-15159-2

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Schematic structure of the ferroelectric diode. b Schematics of the energy band diagrams of the Schottky-to-ohmic interfacial contacts in TiN/HZO/TiN modulated by polarization orientations. c Nonlinear diode-like I–V of the TiN/HZO/TiN device with a cell size of 1 μm. Insets represent a schematic of the potential energy profiles in two opposite polarization states.