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. 2020 Mar 13;11:1391. doi: 10.1038/s41467-020-15159-2

Fig. 4. High-density 3D integration of the ferroelectric diode devices.

Fig. 4

a A schematic view of the 8-layer 3D vertical ferroelectric diode (Fe diode) array. b Cross section of the 3D vertical structure with Fe diode devices and the detailed structure information for the devices, where a 417.5-nm hole structure and 8-layer vertical memory cells can be observed clearly. Scale bar, 500 nm. c The cell size was defined by the thickness of the TiN and the perimeter of the holes (19 nm × 1.31 μm). Scale bar (left), 10 nm. Scale bar (right), 10 nm. d I–V curves of the Fe diode devices in the 4 × 8 array framed in (a). e Typical I–V curve of the TiN/Hf0.5Z0.5rO2/TiN/W device. Switchable diode property was achieved. In this device, low operation current (<1 μA) and high nonlinearity (>100) were achieved. f Resistance distributions of the switchable diode device in the 8-layer array. g Distribution of the nonlinearity in 3D array.