Table 1.

Comparison of the various reported Fe-diode devices.

Structure	Substrate	Preparation method	Thickness of Fe material	Current density	Nonlinearity	On/off ratio
Au/PbTiO3/LSC16	LaA1O3	Epitaxial deposition	200 nm	0.1 A/cm2	2	2
PZT/(LSMO)38	SrTiO3	PLD	30 nm	0.1 A/cm2	2	300
Ag/BFO/Ag17	/	/	90 um	20 mA/cm2	5	20
Ta/PZT/SRO39	SrTiO3	PLD	100 nm	2 A/cm2	2	1.5
SRO/PZT/SRO40	SrTiO3	PLD	150 nm	10 mA/cm2	2	4
SRO/BFO/Pt18	SrTiO3	PLD	120 nm	5.4 A/cm2	5	4
SRO/BFO/Pt41	SrTiO3	PLD	40 nm	—	2	753
This work	SiO2	ALD	10 nm	200 A/cm2	100	10,000