Table 2.

Performance summary of the developed burst UHS CMOS image sensor.

Items	Unit	Value
Process technology		1P5M $0.18$ $\mathsf{\mu }$$\mathrm{m}$ CMOS
Power supply voltage	V	3.3
Pixel pitch (3D stacking equivalent)	μm	${70}^{\mathrm{H}}\times {35}^{\mathrm{V}}$ $({35}^{\mathrm{H}}\times {35}^{\mathrm{V}})$
Photodiode size	μm2	${30.00}^{\mathrm{H}}\times {21.34}^{\mathrm{V}}$
Number of pixels		${50}^{\mathrm{H}}\times {108}^{\mathrm{V}}$
Number of analog memories/pixel		368
		Burst CDS operation		Conventional CDS operation
		In-pixel	Off-pixel	In-pixel	Off-pixel
Maximum frame rate	Mfps	100	125	50	71.4
Record length		368	184	368	184
Conversion gain (measured at 1 Mfps)	μV/e−	99		104
Saturation (measured at 1 Mfps)	ke−	11.5		13.4