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. 2020 Mar 16;10:4828. doi: 10.1038/s41598-020-61602-1

Table 2.

Comparison of various key parameters of the fabricated SBDs.

Device (RR) I0 (A) n ΦB (eV) Rs (kΩ) Rsh (MΩ)
Ag/F8/P3HT/ITO 7.42 6.23 × 10−10 4.03 1.09 269 46.2
Ag/F8-CdSe QDs/P3HT/ITO 142 2.39 × 10−11 2.38 1.17 78.2 295