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. 2020 Mar 10;5(11):5959–5963. doi: 10.1021/acsomega.9b04325

Figure 1.

Figure 1

(a) Optical image of the chip containing the eight devices based on PtSe2 with labeled pads. The dashed red rectangle surrounds the PtSe2 film. (b) IV characteristics of the PtSe2-based resistors reported in Table S1. (c) IV characteristics of the resistors based on MoS2 (blue line) and WSe2 (red line). Inset: sketch of the MoS2 (WSe2) sensor.