Fig. 2. Independent gate operation of Gaussian heterojunctions transistors.
a Representative ID–VD curves for VBG = 0 V, illustrating the VTG tunability of the rectifying diode response, including inverted polarity of the rectification direction (orange versus purple). b Rectification ratios (ID at VD = 1 V divided by ID at VD = –1 V) of the diode for various biasing conditions, showing tunability by both VTG and VBG. c ID-VTG for different values of VBG, exhibiting tunability of the peak position of the antiambipolar response. All measurements were performed in ambient at room temperature with VS = 0 V.