Fig. 3. Dependent gate operation of Gaussian heterojunction transistors.
a ID–VTG for simultaneous sweeping of VBG with VTG with controlled offsets, showing control of both sides of the antiambipolar response and of the peak position. b ID–VTG for varied VD, showing that the height of the Gaussian transfer response can be controlled while maintaining the peak position. c ID–VTG for changing VD and VTG–VBG, indicating that the peak position can be controlled while maintaining the height of the Gaussian transfer response. d ID–VTG comparing dependent and independent gate biasing with an adjusted VD, showing modulation of the FWHM of the Gaussian transfer response while maintaining the height and peak position. All measurements were performed in ambient at room temperature with VS = 0 V.