Table 1. Turn-On Field Values of the Nano-Heterostructure Reported in the Literature.
| material | turn-on field (V/μm) (for J = 10 μA/cm2) | maximum current density (μA/cm2) | references |
|---|---|---|---|
| ZnO/CuSCN nano-heterostructure | 0.7 | 2.2 mA/cm2 (1.8 V/μm) | present study |
| Cu2O/ZnO hetero-nanobrush | ∼6.5 | 425 (∼10.5 V/μm) | (51) |
| GdB6/ZnO hetero-architecture | 2.2 (1 μA/cm2) | 4.6 (mA/cm2) (∼4.5 V/μm) | (52) |
| GdB6/Cu2O hetero-architecture | 2.3 (1 μA/cm2) | ∼900 (∼5.6 V/μm) | (33) |
| SnO2/WO2.72 nanowire heterostructures | 0.82 | ∼31 (∼1.04 V/μm) | (54) |
| CdS–ZnO heterostructures | 2 | ∼1235 (∼3.36 V/μm) | (55) |
| HfO2–ZnO histoarchitecture | 1.84 (1 μA/cm2) | ∼885 (∼3.36 V/μm) | (56) |