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. 2013 Mar 16;47:27–36. doi: 10.1016/j.trac.2013.02.004

Table 3.

Influence of device dimensions and operational conditions on the analytical performance of nanomaterial-based sensors

Sensor description Parameters studied Enhancement of sensor characteristics Enhancement of figures of merit Ref.
Sensor with SWCNT networks for Hg2+ detection CNT-channel width
  • Considering the mathematical relation obtained (width in nm):

  • → Conductivity ∼ width−0.25

  • LODs of 10 nM (for 2-μm-wide SWCNT network sensors) and 1 pM (for 100-nm-wide SWCNT network sensors)

  • Considering mathematical relations obtained (width in nm):

  • → Signal-to-noise ratio ∼ width−1.1

  • → Sensitivity ∼ width−1.6

[56]
FET devices with Si NWs for prostate specific antigen detection (PSA) Operational conditions (linear and sub-threshold regimes)
  • ∼50% of conductance at sub-threshold regime compared to linear regimea

  • LODs of ∼0.75 pM and ∼1.5 fM in linear and sub-threshold regimes, respectively

  • 5-fold greater signal-to-noise ratio at sub-threshold regime compared to linear regimea

[18]
FET devices with SWCNT for poly-l-lysine and poly-l-aspartic acid detection
  • Increase of signal-to-noise ratio (3-fold) at sub-threshold regime compared to linear regime

[57]
a

When sensing 15 pM of PSA.