Fig. 1.
(a) Optical images of IGZO-TFT device; (b) Schematic illustration of experimental apparatus for IGZO-FET sensor; (c) Transfer characteristics of GOx functionalized IGZO-FET after exposure to different concentrations of glucose; and (d) Schematic diagram showing the role of positively charged aminosilane groups as an electron acceptor and the impact of positively charged aminosilane groups on band bending at IGZO surface. Images reprinted from (Du et al., 2016).