Table 1.

Summary of structural and optical properties.

Material/nanostructure with doses		Average reflection in % over a broadband wavelength range
1. Bare GaAs substrate (100)
35% 450–700 mm, 36% 900–1400 nm
2. Nanostructured GaAs with variable EBL exposure doses
EBL design parameters	Experimentally observed parameters
(i) a = 400 nm, d = 180 nm (ii) a = 400 nm, d = 280 nm	Periodicity (approx. in nm) (i) 405 (ii) 405	Diameter (approx. in nm) (i) 270 (ii) 360	Depth (approx. in nm) (i) 220 (ii) 260
Ebeam Doses	% of Reflection for (i) and (ii)	Wavelength ranges in nm
Dose 1	31 (ii) 24 34	450–700 900–1400
Dose 2	16 (ii) 15 33	450–700 900–1400
Dose 3	8 (ii) 16.23 12	450–700 900–1400
Dose 4	6.2 (ii) 11.3 15	450–700 900–1400
Dose 5	2.5 (ii) 8.4 4	450–700 900–1400
Dose 6	4.1 (ii) 5.1 13	450–700 900–1400
Dose 7	5.1 (ii)17.9 10	450–700 900–1400
Dose 8	5.1 (ii)19.05 15	450–700 900–1400
Dose 9	5.4 (ii)12 8	450–700 900–1400
Dose 10	4.5 (ii)10.9 18	450–700 900–1400