Figure 5.

Flexibility of MoS₂‐based artificial synapse. a) Schematic and b) optical image of flexible device measurement in curved state. The thickness of PET is 175 µm c) Transfer characteristics of device under flat state and with a radius of curvature of 10, 7.5, and 5 mm. d,e) Amplitude‐dependent d) EPSC and e) IPSC of curved device (R = 10 mm) at different electrical pulses with width of 100 ns. Inset presents the pulse amplitude applied to device. f) EPSC and IPSC stimulated by consecutive electrical pulses (amplitude = −4 V/5 V, pulse number = 20, pulse width = 100 ns) with interval of 10 s under flat state and curved state (R = 10 mm). g) Controlled post‐synaptic current as a function of pre‐synaptic pulse number in a flat states and curved state (R = 10 mm).