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. 2020 Apr 22;15:90. doi: 10.1186/s11671-020-03299-9

Fig. 6.

Fig. 6

a Endurance cycles of HfOx-based RRAM at different SET voltage and cell size b with different thickness (T5= 2 nm, T20= 10 nm) at 2.5 V set voltage. c Resistance distribution of 1-kb array obtained from Weibull plots under different endurance cycles. d 100 k cycles endurance of 2-Mb-Ta2O5-based array; Reprinted from refs [102104]