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Comparison between metal-oxide RRAM and conductive bridge RRAM
| Parameter | Metal-oxide RRAM | Conductive bridge RRAM |
| Speed (ns) | 5 [81] | 1 [99] |
| Operation voltage (V) | ∼ 3 [51] | ∼ 7 [86] |
| Operation current (μA) | 5 [51] | 10 [87] |
| Endurance (cycles) | 1012 [84] | 106 [41] |
| On/off ratio | 107 [88] | 107 [100] |
| Retention@ 85∘C (s) | 106 [44] | 106 [41] |
| Multilevel capacity | Yes | Yes |
| CMOS compatible | Yes | Yes |
| Fabrication | Easy | Easy |
| Scalability | Good | Good |
