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Comparison of RRAM models
| ASU/Stanford [130]–[132] | Physical electro-thermal model [135] | Huang’s physical model [142] | Filament dissolution model [143]–[145] | Bocquet bipolar model [148] | |
|---|---|---|---|---|---|
| Device type | Bipolar | Bipolar | Bipolar | Unipolar | Bipolar |
| State variable | Filament gap (g) | Ion concentration | Filament gap (g) | Ion concentration | Radius of CF |
| and width of CF | |||||
| Control mechanism | Voltage | Voltage | Voltage | Voltage | Voltage |
| Simulation compatible | SPICE/Verilog | COMSOL | SPICE | COMSOL | SPICE |
