Table 2. Impedance-Fitted Parameters for the 4-Bs/Oct Si QD and Si QD Cluster Electrodes^a,b.

electrode	Re	Rsei	CPEsei-T	CPEsei-P	Rct	CPEct-T	CPEct-P	W–R	W–T	W–P
4-Bs/Oct Si QD	4.00	667.20	7.33 × 10–6	0.69	147 620	3.64 ×10–4	0.78	815 890	23.13	1.26
Si QD cluster	2.48	271.30	2.39 × 10–5	0.67	845	1.18 ×10–3	0.63	1224	83.36	0.73

^aResistance (R) and CPE–T parameters have units of Ω and F·s^{(CPE–P)–1}, respectively.

^bWarburg diffusion resistance (W–R) and Warburg diffusion capacitance (W–T) have units of Ω and s, respectively.