Figure 1.

Synthesis of semiconducting V‐doped monolayer WSe₂ and ferromagnetic characteristics. a) Schematic of synthesis of V‐doped WSe₂ by mixing liquid W with V precursors. The inset shows optical image of CVD‐grown V‐doped WSe₂ monolayer. Scale bar, 50 µm. b) Source‐drain current (biased at 1 V) with the gate bias for V‐doped WSe₂ field‐effect transistors with various V‐doping concentrations. c) Topography and d) MFM phase images of pristine WSe₂ at RT. Scale bar, 10 µm. e) Topography and f) MFM phase images of 0.1% V‐doped WSe₂ at RT. Scale bar, 10 µm. g) The schematic typical features observed in MFM phase images.