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. 2020 Mar 11;7(9):1903076. doi: 10.1002/advs.201903076

Figure 4.

Figure 4

Gate‐tunable magnetic properties and band structure of V‐doped WSe2. a) Schematic of experimental arrangement for gate‐dependent MFM measurements. b) Gate‐dependent MFM images and c) their phase deviation for 0.1% V‐doped WSe2. d) Temperature‐dependent MFM images and e) their phase deviation at −10 V of gate bias. All scale bars, 10 µm.