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. 2020 May 8;11:2304. doi: 10.1038/s41467-020-16034-w

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — a Absorption coefficients of Cs₃Bi₂I₉, CsI, CdTe, silicon, and carbon as a function of photon energy. b Attenuation efficiency of Cs₃Bi₂I₉, MAPbI₃, Cs₂AgBiBr₆, MAPbBr₃, MAPbCl₃, silicon, and carbon for 40 keV X-ray photons versus thickness. c Schematic of the Cs₃Bi₂I₉ PSC-based X-ray detector structure. d Photoconductivity measurement of the Cs₃Bi₂I₉ PSC device with the inset illustrating the device structure. e X-ray-generated photocurrent density and gain factor versus dose rate under different applied biases. f Sensitivity under different electric field of the Cs₃Bi₂I₉ PSC X-ray detector. g X-ray photocurrent response of the Cs₃Bi₂I₉ PSC device under electric field of 50 V mm⁻¹ when exposed to different X-ray dose rates. h, i Photos and corresponding X-ray images of a key and a nut obtained using the Cs₃Bi₂I₉ SC detector (1 × 1 mm²), as measured under 50 V mm⁻¹ electric field with dose rate of 36.2 µGy_air s⁻¹.