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. 2020 Mar 10;59(19):7561–7568. doi: 10.1002/anie.202000586

Figure 3.

Figure 3

Continuous‐wave X‐band (top) and Q‐band (bottom) of 2‐R (black) with simulations (colored lines). A sharp radical impurity of the Q‐band 2‐B sample at the g≈2 region (≈12 050 G) is omitted. Spectrometer conditions detailed in the Supporting Information. EPR simulation parameters; 2‐B: g=[2.279, 2.071, 1.970]; A(Sb)=[300, 500, 1240] MHz; A(Ga)=[173, 168, 150] MHz; A(B)=[20.8, 23.5, 25.1] MHz, [α, β, γ]=[‐10°, 35°, 0°]; g‐strain=[0.008, 0.008, 0]; X‐band lw (linewidth) (fwhm)=3.0 G; Q‐band lw=4.0 G. 2‐C: g=[2.215, 2.025, 1.972]; A(Sb)=[500, 560, 1330] MHz; A(Ga)=[169, 179, 169] MHz; X‐band lw=2.0 G; Q‐band lw=1.2 G; g‐strain=[0.012, 0, 0] (Q‐band only). 2‐N: g=[2.151, 1.980, 1.972]; A(Sb)=[651, 782, 1140] MHz; A(Ga)=[149, 163, 155] MHz; X‐band lw=2.0 G H‐strain=[30, 10, 80] MHz; Q‐band lw=1.5 G; H‐strain=[160, 50, 120] MHz.