Table 3.

Comparison between the electrochemical performance of BMS anodes in SIBs.

Materials	Current density [mA g−1]	Cycle number	Cut-off voltage [V]	Specific capacity [mA h g−1]
NiCo2S4@NC	100 6,000	200 5,000	0.4–3	570.1 395.6
	100	1	0.4–3 0.01–3	742.2 878.2
		70	0.4–3 0.01–3	570.1 181.3
Ni3Co6S8-RGO	500	2 100	0.001–3	504 498
Ni3Co6S8		2 100		522 125
NiCo2S4@RGO	50	20 70	0.01–3	603.5 530.2
NiCo2S4		20 70		462.1 317
Co1Zn1-S (600)	100	1 100	0.01–3	745 542
	10,000	5,000		219.3
Co8FeS8	50	40	0.01–3	≈500
	500	150		87
Co0.5 Fe0.5S2	100	60	0.8–2.9	328
	2,000	5,000		220
(ZnxCo1−xS QD@HCP) @rGO	300	500	0.01–2.9	638
(SnCo)S2/SG	500	300	0.01–3	593
	5,000	5,000		487
(Ni0.3Co0.7)9S8/N-CNTs/rGO	25	300	0.01–3	298.1
CuCo2S4/rGO	100	50	0.01–2.5	433
Ti0.25Sn0.75S2 @MWCNTs	200	50	0.01–2.5	307
	400	1,000		388
CoSnSx@NC	200	500	0.01–3	300
	1,000	4,000		180
N/S-rGO@ZnSnS3	100	100	0.01–3	501.7
	1,000	500		290.7
VMo2S4-rGO	1,000	200	0.01–3	254
ZnSnS3@ rGO	100	200	0.01–2.5	401.2
(Co0.5Ni0.5)9S8/NC	50	100	0.01–3	569.9
Cu2MoS4	500	2,000	0.5–3	205.7
SnS2/Mn2SnS4/C	5,000	500	0.1–3	522.5
CuCo2S4	200	140	0.01–3	522.4
NiMo3S4/CT	480	1,000	0.01–3	302
(Fe0.5Ni0.5)9S8	1,000	100	0.01–3	527
Bi0.94Sb1.06S3	1,000	100	0.01–2.8	380
CuV2S4	150	150	0.1–3	500
	700	300	0.01–3	580