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. 2020 May 13;10:7904. doi: 10.1038/s41598-020-64809-4

Figure 1.

Figure 1

(a) Side-view SEM image of as-grown asymmetric WZ GaP nanowire and top-view SEM image of GaP structure grown for 6 hours and transferred to Si substrate. (b) and (c) Room temperature Raman spectra performed in the Z(XX)Z¯and Z(XY)Z¯configurations, respectively, showing the E2L mode characteristic of the hexagonal phase. Insets show the spectra around the optical phonons. The deconvoluted modes are shown in dashed lines.