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. 2020 May 15;11:2428. doi: 10.1038/s41467-020-16291-9

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Cross-sectional crystal structures of SnS along the armchair direction with different stacking sequences: non-centrosymmetric AA and centrosymmetric AB staking. b Top view of crystal structure of monolayer SnS, whose twofold axis is along the armchair direction. Highlighted area shows thermodynamically stable facets. c The minimum thickness versus lateral size of PVD grown SnS with changing T_source and T_sub. d AFM topographic images of SnS crystals with different thicknesses from bulk to monolayer. The scale bars represent 1 µm. e Cross-sectional bright-field STEM image of trilayer SnS. f Cross-sectional TEM image of monolayer SnS along the armchair direction. As guide to the eye, all of the region except the SnS crystal is shaded, and the atomic model is overlaid on the TEM image. g Thickness dependence of Raman spectrum for SnS at 3 K. The peaks in the hatch come from the mica substrate. h SHG spectra for SnS with different thicknesses from bulk to monolayer at RT.