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. 2020 May 15;11:2428. doi: 10.1038/s41467-020-16291-9

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — a Ferroelectric resistive switching for SnS with different thicknesses: monolayer, bilayer, trilayer, and 15 L. b Thickness dependences of the SHG intensity and ON/OFF ratio for different thicknesses. The ON/OFF ratio was determined at the coercive electric field of I_D–V_D for Ag/SnS device. Each data points of SHG and ON/OFF ratio represent an individual SnS crystal. c Cross-sectional HAADF-STEM image of 16 L SnS along the armchair direction. The scale bars represent 1 nm.