Table 1.

Structure, function, and representative device figure of merit reported in this study.

Material	Device	Device structure	Dimension	Application	Figure of merita
IGZO FN	TFT (CFN = 0.15 µm−1)	Al/IGZO FN/SiO2/Si	W = 1 mm, L = 100 µm	Switch	µ ~  1 cm2 V−1 s−1 Ion/Ioff = 4 × 104
				Gas sensor	RT response LOD = 20 ppb SG = 33.6% ppm−1
	Flexible TFT (CFN = 0.15 µm−1)	Ion-gel/IGZO FN/Au(Ti)/PI	W = 1 mm, L = 50 µm	Switch	µ ~ 0.5 cm2 V−1 s−1 Ion/Ioff = 4 × 104 r = 5 mm, 1000 cycles
	Stretchable resistor (CFN = 0.5 µm−1, R = 30–50 MΩ)	PEDOT:PSS/IGZO FN/PEDOT:PSS	W = 1 mm, L = 100 µm	Strain sensor	Gauge factor ~ 15 Elongation ≥50%
				Gas sensor	RT response SG = 38–166% ppm−1 Elongation = 50%
		Cr-Au/IGZO FN/Cr-Au		Thermistor	ST = 2.1–2.2% °C−1 Elongation ≥ 10% strain
				Breath analyzer	Ion/Ioff = 103 Distinguish different breath frequencies and alcohol test
				Photodetector	Rph = 16 mA W−1 Iph/Id = 403 D* = 5.2 × 1010 Elongation = 10% strain
	Stretchable resistor (CFN = 2.0 µm−1, R = 1.4 GΩ)	Cu wire/IGZO FN/Cu wire	1 × 2 cm2	System integration	Differentiate solar light, temperature, stretch, and breath stimuli
CuO FN	Stretchable resistor (CFN = 0.5 µm−1, R = 20–30 MΩ)	Cr-Au/CuO FN/Cr-Au	W = 2 mm, L = 50 µm	Pressure sensor	SP = 0.04 kPa−1 LOD = 50 Pa
	Stretchable resistor (CFN = 2.0 µm−1, R = 100 MΩ)	Cu wire/CuO FN/Cu wire	1 × 2 cm2	System integration	Differentiate solar light, temperature, stretch, and breath stimuli
ITO FN	Stretchable resistor (CFN = 2.0 µm−1, R = 3–7 MΩ)	Cu wire/ITO FN/Cu wire	1 × 2 cm2	Strain sensor	Gauge factor ~ 21 Elongation ≥50%
				Motion recognition	Distinguish different finger gestures
				System integration	Differentiate solar light, temperature, stretch, and breath stimuli

^aThe values are the average of at least five samples and the maximum stdv. is <10%.