Table 1.
Element with Precursor, Linear Formula, Sum Formula | Abbreviation | Metal (at.%) * | Matrix * | Max Metal Content Reported so far |
---|---|---|---|---|
C-FIBID with phenanthrene [36,37,38,39,40,41,42,43,44], C14H10 | C14H10 | 3–25 Ga | a-C:Hx | Up to 25 at% Ga contamination depending on deposition parameters |
C-FEBID with paraffin (CnH2n+2) [45] : n-docesane C22H46; n-tetracosane, C24H50 | C22H46, C24H50 |
0 | a-C:Hx | Cleanest—no metal in deposit when using FEBID |
Pt-FEBID and FIBID with Trimethyl- (methylcyclopentadienyl)–platinum [46,47,48,49], (CH3)3Pt(C5H4CH3); PtC9H13 | Pt- (CpMe)Me3 |
10–15 (FEB) Pt/Ga: 42/20 (FIB) [46] |
a-C:Hx | FEB: Pt ≈100 at.% (+H2O) [26] FIB: ≈ 45 at% (5 at.% Ga) [50] |
W-FEBID and FIBID with Tungsten-hexacarbonyl [51,52], W(CO)6 | W(CO)6 | W/Ga: ≈ 80/18 (FIB) [51] W: 47–62 (FEB) [52] |
FIB: a-C:O, ≈ C85O15 [51] FEB: a-C:O, ≈ C80O20 [52] |
FIB: ≈ 80 at.% W [51] FEB: ≈ 62 at.% [52] |
Co-FEBID with Dicobaltoctacarbonyl Co2(CO)8 (This work and [52]) | Co2(CO)8 | ≈ 72 (This work) ≈ 42 [52] |
a-C:O, ≈ C67O33 (This work)a-C:O, ≈ C80O20 [52] | Co ≈ 95 at.% (FEB) [21] |
Au-FEBID with Dimethyl(trifluoro- acetylacetonate)-gold (This work), (CH3)2Au(O2C5H4F3); C7H10AuF3O2 | Au(tfac)Me2 | 50 (FEB) | a-C:O,F,H ≈ C85O20Hx |
FEB: Au 100 at.% (+H2O) [32] |
Cu-FEB: Copper(II) hexafluoroacetyl- acetonate [53], Cu(C5HF6O2)2; CuC10H2F12O4 | Cu(hfac)2 | 6–10 (FEB) | a-C:O,F,H ≈ C60...70O20..22F4..8Hx |
FEB: ≈ 10 at.% [54] No FIB data |
Cu-FEBID with hexafluoropentane- dionate-Copper–vinyltrimethylsilane [55], C5H12Si-Cu-C5HF6O2; CuC10H13F6O2Si | (hfac)Cu- VTMS |
14–30 (FEB) | a-C:O,F,H,Si≈ C70O14Si10Hx [56] | FEB: ≈ 95 at.% [57]FIB: ≈ 95 at.% Cu (5 at.% Ga) [58] Both achieved with heating |
Fe-FIBID with Ferrocene [59], Fe(C5H5)2; FeC10H10 | Fe(Cp)2 | 5 at% Fe (FIB) | a-C:Hx | FEB: 95 at.% with Fe(CO)5 [60,61] |
SiO2-FIBID with Tetramethylcyclotetra- siloxane [62], (HSiCH3O)4; Si4C4H12O4 | (HSiCH3O)4 | 5 at% Ga [63] | C < AES noise level [63] | FIB: 95 at.% SiO2, 5at.% Ga (+traces of O2) [63] |
SiO2-FEBID with Tetramethoxysilane (This work), Si(OCH3)4; SiO4C4H12 | Si(OCH3)4 | 33 (FEB) | a-C:H,O ≈ C56O44Hx [34] |
FEB 100 at.% SiO2 (+H2O) [34] |
Rh-FEBID with Rhodium-tetrakis- chlorotrifluorophosphine (This work), [RhCl(PF3)2]2; Rh2Cl2P4F12 | Rh2Cl2(PF3)4 | 70 (FEB) | a-P:Cl ≈ P77Cl23F0 [64] |
FEB: 60–70 at.% (This work) No FIB data |
* Literature references in these two columns differ from column one (left) when no composition data was found there.