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. 2020 Apr 10;11(4):397. doi: 10.3390/mi11040397

Table 1.

Summary of precursors and references of focused electron beam and focused ion beam-induced deposition (FEBID and FIBID) materials for which mechanical properties were reported. Chemical formulae and abbreviations as used in this article are given as well as the resulting deposit metal content and matrix composition. The maximum achieved metal contents (sometimes with additional co-reactant gases) obtained so far are shown in comparison with the corresponding reference. The abbreviation a-C:H,O,F reads as amorphous carbon being hydrogenated, oxygenated, and/or fluorinated.

Element with Precursor, Linear Formula, Sum Formula Abbreviation Metal (at.%) * Matrix * Max Metal Content Reported so far
C-FIBID with phenanthrene [36,37,38,39,40,41,42,43,44], C14H10 C14H10 3–25 Ga a-C:Hx Up to 25 at% Ga contamination depending on deposition parameters
C-FEBID with paraffin (CnH2n+2) [45] : n-docesane C22H46; n-tetracosane, C24H50 C22H46,
C24H50
0 a-C:Hx Cleanest—no metal in deposit when using FEBID
Pt-FEBID and FIBID with Trimethyl- (methylcyclopentadienyl)–platinum [46,47,48,49], (CH3)3Pt(C5H4CH3); PtC9H13 Pt-
(CpMe)Me3
10–15 (FEB)
Pt/Ga: 42/20 (FIB) [46]
a-C:Hx FEB: Pt ≈100 at.% (+H2O) [26]
FIB: ≈ 45 at% (5 at.% Ga) [50]
W-FEBID and FIBID with Tungsten-hexacarbonyl [51,52], W(CO)6 W(CO)6 W/Ga: ≈ 80/18 (FIB) [51]
W: 47–62 (FEB) [52]
FIB: a-C:O, ≈ C85O15 [51]
FEB: a-C:O, ≈ C80O20 [52]
FIB: ≈ 80 at.% W [51]
FEB: ≈ 62 at.% [52]
Co-FEBID with Dicobaltoctacarbonyl Co2(CO)8 (This work and [52]) Co2(CO)8 ≈ 72 (This work)
≈ 42 [52]
a-C:O, ≈ C67O33 (This work)a-C:O, ≈ C80O20 [52] Co ≈ 95 at.% (FEB) [21]
Au-FEBID with Dimethyl(trifluoro- acetylacetonate)-gold (This work), (CH3)2Au(O2C5H4F3); C7H10AuF3O2 Au(tfac)Me2 50 (FEB) a-C:O,F,H
≈ C85O20Hx
FEB: Au 100 at.% (+H2O) [32]
Cu-FEB: Copper(II) hexafluoroacetyl- acetonate [53], Cu(C5HF6O2)2; CuC10H2F12O4 Cu(hfac)2 6–10 (FEB) a-C:O,F,H
≈ C60...70O20..22F4..8Hx
FEB: ≈ 10 at.% [54]
No FIB data
Cu-FEBID with hexafluoropentane- dionate-Copper–vinyltrimethylsilane [55], C5H12Si-Cu-C5HF6O2; CuC10H13F6O2Si (hfac)Cu-
VTMS
14–30 (FEB) a-C:O,F,H,Si≈ C70O14Si10Hx [56] FEB: ≈ 95 at.% [57]FIB: ≈ 95 at.% Cu (5 at.% Ga) [58]
Both achieved with heating
Fe-FIBID with Ferrocene [59], Fe(C5H5)2; FeC10H10 Fe(Cp)2 5 at% Fe (FIB) a-C:Hx FEB: 95 at.% with Fe(CO)5 [60,61]
SiO2-FIBID with Tetramethylcyclotetra- siloxane [62], (HSiCH3O)4; Si4C4H12O4 (HSiCH3O)4 5 at% Ga [63] C < AES noise level [63] FIB: 95 at.% SiO2, 5at.% Ga (+traces of O2) [63]
SiO2-FEBID with Tetramethoxysilane (This work), Si(OCH3)4; SiO4C4H12 Si(OCH3)4 33 (FEB) a-C:H,O
≈ C56O44Hx [34]
FEB 100 at.% SiO2 (+H2O) [34]
Rh-FEBID with Rhodium-tetrakis- chlorotrifluorophosphine (This work), [RhCl(PF3)2]2; Rh2Cl2P4F12 Rh2Cl2(PF3)4 70 (FEB) a-P:Cl
≈ P77Cl23F0 [64]
FEB: 60–70 at.% (This work)
No FIB data

* Literature references in these two columns differ from column one (left) when no composition data was found there.