Fig. 7. Equilibrium state of the transistor channel.

a Density of cations p_ion(x, y = 0), b holes p(x, y = 0), and c electric potential Φ(x, y = 0) along the channel of the simulated OECT shown in Fig. 6 at V_GS = −2V_T. The parameters used for the simulation are summarized in Supplementary Table 1. Concentrations are scaled to the doping concentration in the PEDOT:PSS layer p₀ = 10²⁰ cm⁻³, spatial coordinates are scaled by the channel length of the device L₀ = 1.13 μm, and the potential is scaled by the thermal voltage V_T = k_BT/e.