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. 2020 May 21;11:2535. doi: 10.1038/s41467-020-16370-x

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a–c The investigated modulation geometries; transmission, reflection and total internal reflection (TIR) respectively. A CW optical pump (450 nm) photo-excites a conductive layer (indicated by σ) in silicon. A THz beam is launched at the conductive layer and a detector collects the radiation in the direction indicated by “out” in each geometry. The incident angles of the THz beam onto the conductive layer are 8.5°, 8.5° and 30°, respectively. Note that the same silicon wafer used in a and b was placed onto top of the silicon prism in c for truthful comparison. d THz modulation depth as a function of pump fluence for the different geometries in a–c with the dashed lines being modeling.