Figure 2:

(a) Optical micrograph of an Al₂O₃-encapsulated tellurene device with source and drain electrodes as indicated. (b) Transport characteristics of the device, with the global device carrier equivalence point at V_BG = 20 V and electron and hole transport regimes as indicated. Inset: The IV characteristics of the device at V_BG as indicated with near-ohmic behavior, though some nonlinearity and increased noise are seen at positive V_sd. (c) Contact mode AFM topography of the device active area (source and drain electrodes are just out of view at image top and bottom). (d) and (e) show SMM images acquired at sequentially decreasing values of V_BG as indicated, with the conductance S_G and capacitive S_C channels, respectively.