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. 2020 Jun 3;11:2780. doi: 10.1038/s41467-020-16063-5

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — Spin (τ_s) and momentum (τ_m) relaxation times are shown for: a electrons in n-Si with carrier concentration 7.8 × 10¹⁵ cm⁻³ (compared to experiment^26,27), b holes in p-Si with carrier concentration 1.3 × 10¹⁵ cm⁻³, and c iron (compared to experiment^29–31). d Cumulative contributions to spin relaxation by change in spin, Δs, per scattering event defined based on Eq. (5): electrons in Si exhibit spin flips with all contributions at Δs = 1, whereas holes in Si and electrons in iron exhibit a broad distribution in Δs.