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. 2020 Jun 3;11:2780. doi: 10.1038/s41467-020-16063-5

Fig. 7. Dependence of GaN spin relaxation on extrinsic scattering.

Fig. 7

In-plane (τs,xx) and out-of-plane (τs,zz) spin lifetime of GaN as a function of extrinsic scattering rates at 300 K. The experimental τs,zz at 298 K is from ref. 69.