. 2020 May 15;76(Pt 3):378–410. doi: 10.1107/S2052520620003893

Table 4. Overview of the electronic contribution of the T element for R ₄ T ₂Si₆ building units including one [Si₆] ring, using the formula vea = 4 e(R) + 2 e(T) + 6 e(Si), with e(Si) = 4.

The values are given for different valence electron amounts (vea) and different electronic contributions by the R element (2 e⁻ for the ionic state and 0 e⁻ for the metallic state). Up to now, the ionic state was only reported for divalent R and monovalent T elements, other combinations with divalent R are improbable.

	e(R) =
vea	0	+1	+2
28	+2	+0	−2
30	+3	+1	−1
32	+4	+2	+0
34	+5	+3	+1
36	+6	+4	+2

Table 4. Overview of the electronic contribution of the T element for R 4 T 2Si6 building units including one [Si6] ring, using the formula vea = 4 e(R) + 2 e(T) + 6 e(Si), with e(Si) = 4.

Table 4. Overview of the electronic contribution of the T element for R ₄ T ₂Si₆ building units including one [Si₆] ring, using the formula vea = 4 e(R) + 2 e(T) + 6 e(Si), with e(Si) = 4.