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. 2020 May 20;10(5):981. doi: 10.3390/nano10050981

Figure 1.

Figure 1

Mass gain as function of time during deposition of ZnO on SiO2 at 80 °C, N2 and He was used as carrier gas for diethyl zinc (DEZn) and H2O respectively. DEZn precursor was saturated at 50 °C, while H2O was saturated at room temperature. The flows for all gases were kept at 50 mL/min.