Table 1.
Material | Optoelectronic properties | Applications |
---|---|---|
Graphene |
Operating wavelength: ultraviolet to radiowaves. 2.3% of the vertically incident light absorption. Tunable bandgaps. |
|
Strong third order nonlinearity. | THG,[ 102 ] HHG,[ 107 ] FWM,[ 102 ] Optical frequency comb.[ 9 ] | |
Bandgap:0 eV. Ultrafast carrier relaxation time. The strong light–material interaction. |
Broadband modulators and photodetectors.[ 112 , 113 , 114 , 116 , 117 , 118 , 119 , 120 , 121 , 122 , 123 , 124 , 125 , 126 , 131 , 132 , 133 , 134 , 135 , 136 ] | |
High carrier mobility and high conductivity. | Plasmonic generators.[ 8 , 149 , 150 , 151 , 152 , 153 , 155 , 156 ] | |
Strong molecular adsorption capacity and light response enhancement. | Gas and biochemical sensors.[ 167 , 171 , 174 , 179 , 180 , 181 ] | |
TMDs |
Operating wavelength: visible light. The absorption of vertically incident light is up to 20%. Tunable bandgaps. |
Visible to NIR ultrafast lasers.[ 65 , 66 , 67 , 68 , 69 , 70 ] Light emitters.[ 87 ] |
Strong second and third‐order nonlinearity related to the number of layers. | SHG,[ 100 , 101 ] THG,[ 103 ] HHG,[ 108 ] FWM.[ 104 ] | |
Bandgap: 1–2.5 eV. Large carrier mobility, high‐current ON/OFF ratio and strong photoluminescence. |
Visible to NIR photodetectors.[ 137 , 138 , 139 ] | |
Strong fluorescence quenching ability and good recognition ability of biomolecules. |
Label free detection. Gas and biochemical sensors.[ 168 , 172 , 175 , 182 , 183 , 184 ] |
|
BP |
Operating wavelength: visible light to mid infrared. Strong light–material interaction. Tunable bandgaps. |
|
Strong third order nonlinearity. | THG,[ 105 ] HHG,[ 109 ] FWM.[ 27 ] | |
Bandgap:0.3–2 eV. Strong field‐effect tuning. |
NIR modulators and photodetectors.[ 111 , 127 , 128 , 140 , 141 , 142 ] | |
Strong in‐plane anisotropy. | Anisotropic plasma.[ 159 ] | |
Sensitive to the surrounding atmosphere. | Gas sensors.[ 169 , 173 , 176 , 186 ] | |
MXenes |
Operating wavelength: ultraviolet to radiowaves. Optical transmission ≈1% nm−1. Tunable bandgaps. |
|
Broadband and strong third‐order nonlinearity. Efficient photon–phonon conversion. |
FWM[ 106 ] | |
High conductivity. Tunable workfunction. Bandgap: 0–2 eV. |
Modulators.[ 40 , 41 , 129 , 130 ] | |
Large mechanical moduli. 100% spin purity half‐metallic. |
Plasmonic generators.[ 160 , 161 , 162 , 163 ] | |
Easy surface decoration. | Sensors[ 188 , 189 , 190 , 191 , 192 , 193 ] |