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. Author manuscript; available in PMC: 2020 Sep 1.
Published in final edited form as: 2d Mater. 2019 Dec 11;7(1):014004. doi: 10.1088/2053-1583/ab5ae2

Figure 4.

Figure 4.

Nanoelectronic sensing. (a) IDS–VG characteristics of the sensor pre-functionalization (black), after functionalization with wsMOR (red), and after exposure to 10 μM DAMGO (blue). VD = 0.1 V. (b) Electronic response reported as percentage change in IDS with respect to the IDS of wsMOR-functionalized device, extracted from IDS–VG curve at VG = 2.5 V. Error bars represent the standard deviation of the mean between three repeated measurements. The experimental data was fitted by the Langmuir–Hill isotherm to obtain the sensor calibration curve for the nanoelectronic mode (red). (c) Normalized electronic response of three different devices.