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. 2020 Jun 10;10:9444. doi: 10.1038/s41598-020-66408-9

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Effect of material structure on main sensor characteristics. (a) Contour plot of S_GA against n_0D and L_a². (b) The plot of S_GA against n_0D, showing a linear trend. The grey shading represents the region where n_0D is below the detection limit of Raman. The error bars of S_GA are ±5% and come from the uncertainties in calculations of the sensor area including the contribution of the surface roughness. (c) Scatter plot of S-B ratio against S_GA. The data show two sensor groups (denoted as S_GA1 and S_GA2), where sensors within each group had similar S_GA but different S-B ratio. (d) The monotonic increase of the S-B ratio with L_a² for these two sensor groups suggests the effect of L_a² on the background current. The dashed lines are guide for the eyes. The numbers next to the data points (1, 2, 3, 4) indicate the device names of four representative NG micro-sensors, which cover the entire range of measured S_GA and S-B ratio in our experiments. The FSCV characteristics of these sensors are shown in the Supplementary Information. The error bars of the S-B ratio are less than ±4%.