Fig. 3.

Carrier density and temperature-dependent properties of defective MoS₂ on h-BN substrate. (A) Four-probe sheet conductivity of MoS₂/h-BN devices as a function of T and V_g. MIT can be observed when σ_s ∼ e²/h. The anomalous peaks T_max at low temperatures are marked out by the red dashed line. (B) Four-probe sheet conductivity of MoS₂/SiO₂ devices as a function of T and V_g. (C) Temperature-dependent field effect mobility. The solid line shows the phonon-limited power law ${\mu }_{ph}\sim T^{-\text{γ}}$. $\text{γ}=1.7$ and $\mu \sim 200\hspace{0.17em}{\text{cm}}^2{\text{V}}^{-1}{\text{s}}^{-1}$ for MOS₂/SiO₂ sample. For MoS₂ on h-BN, $\text{γ}=2.1$ and $\mu$ reaches $405\hspace{0.17em}{\text{cm}}^2{\text{V}}^{-1}{\text{s}}^{-1}$. For T < 100 K, $d{\mu }_{FE}/dT>0$ is observed for MoS₂/h-BN sample indicating an anomalous scattering mechanism. (D) Temperature dependence of four-probe resistance at V_g = 70, 50, and 30 V for MoS₂/h-BN device, with the resistance minima at 70, 89, and 135 K, respectively. (E) Gate tuning of the Kondo temperature T_k. (F) Normalized Kondo resistance versus normalized temperature for the data from V_g = 10 V to V_g = 70 V. The red dashed line describes the universal Kondo behavior from numerical renormalization group calculations (35).