Fig. 4. Real-time and low-dose X-ray imaging with Cs₂Ag_0.6Na_0.4In_0.85Bi_0.15Cl₆ scintillator wafers.

a Photographs of a Cs₂Ag_0.6Na_0.4In_0.85Bi_0.15Cl₆ wafer under daylight and X-ray illumination (dose rate: 47.2 μGy_air s⁻¹, voltage: 50 kV). b SEM images of the wafer surface. c Photograph of a circuit board (top) and its X-ray image (below) (dose rate: 47.2 μGy_air s⁻¹, voltage: 50 kV). d RL intensity of Cs₂Ag_0.6Na_0.4In_0.85Bi_0.15Cl₆ measured at low-dose rates. The detection limit is derived from the fitting curve as the value when the SNR equals 3 (voltage: 50 kV). e X-ray images of the test-pattern plate acquired under different X-ray doses (voltage: 50 kV). f Real-time X-ray images of finger bending (dose rate: 47.2 μGy_air s⁻¹, voltage: 50 kV)