Figure 1.

Schematic of far UVC light generation with the sapphire wafer and C-beam pumping. The anode consists of the sapphire wafer and an Al electrode used as an anode electrode. The CNT emitters are precisely patterned on the Si wafer, and a bias is applied to the gate to emit electrons. The emitted electrons are accelerated by the anode bias applied to the Al electrode, and the accelerated electrons collide with the sapphire wafer to generate far UVC light through the excitation and relaxation processes.