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. 2020 Jul 10;11:3449. doi: 10.1038/s41467-020-17296-0

Fig. 2. Compositional and electronic characterisations of the synthesised monolayer SnS.

Fig. 2

a Sn 3d XPS spectra deconvoluted and fitted to show the typical peaks of Sn2+ binding energies at 485.9 and 494.3 eV. b S 2p XPS spectra deconvoluted and fitted to show peaks at binding energies of 161.2 and 162.5 eV c XPS valence band spectrum indicating the energy difference between the Fermi level and the valence band maximum is ~0.6 eV. d PESA spectrum where it is observed that the Fermi energy level is ~4.7 eV below vacuum (cps-counts s−1). e Tauc plot converted from the UV-Visible spectroscopy indicates the optical bandgap as ~1.4 eV. f Hall resistance (Rxy) of the monolayer SnS as a function of the applied magnetic field (B) with optical image of six-terminal Hall device in the inset. g Resulting assessed electronic band structure system of monolayer SnS confirming p-type semiconducting nature.