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. 2020 Jun 15;10(6):1165. doi: 10.3390/nano10061165

Figure 2.

Figure 2

(a) Transfer curves of the TFTs I, II and III (W/L = 100/10 μm) before bias stress. The transfer curves were measured before and after 1 h of PBTS (dash line) at VDS = 0.1 and 10 V for (b) device I, (c) device II and (d) device III, respectively.