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. 2020 Jun 15;10(6):1165. doi: 10.3390/nano10061165

Figure 4.

Figure 4

High-resolution TEM (HR-TEM) images of the gate insulator (GI) (SiO2)/active (IGZO)/buffer (SiO2) interfaces for devices (a) I, (c) II and (f) III, respectively. Annular dark-field (ADF) images in a scanning TEM (STEM) for devices (b) I, (d) II and (e) III, respectively. (g) Enlarged interface of device III.