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. 2020 Jun 15;10(6):1165. doi: 10.3390/nano10061165

Table 1.

Summary of the device parameters and bias stability for the three TFTs. The threshold voltage shift (ΔVth) was measured after 1 h PBTS.

Vth (V) µFE (cm2/V·s) SS (mV/dec) ΔVth (V)
Device I 0.0 9.2 181 0.2
Device II 1.1 3.8 109 3.2
Device III −0.2 9.0 139 0.2