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. 2020 Jul 16;11:3566. doi: 10.1038/s41467-020-17297-z

Fig. 3. Optical image and electrical characterization of a fully 2D-material-based FETs.

Fig. 3

a Optical micrograph of a fully 2D-material-based transistor on paper. The scale bar corresponds to 250 μm. b Typical transfer characteristic curve measured as a function of the gate voltage for a drain voltage of 2.5 V. Logarithmic scale: black dots, drain current; red dots, gate current. inset, Typical transfer characteristic curve measured as a function of the gate voltage for a drain voltage of 2.5 V in linear scale. c Typical output characteristic curves measured at increasing gate voltages (from VGS = 0.0 V to VGS = 1.75 V, steps of 0.25 V).