Table 2. Comparison of Some Bonding Methods for Fabricating Integrated Microelectrode PMMA Devices.
| bonding method | bonding conditions | metallic microelectrode | reference |
|---|---|---|---|
| thermal bonding | •108 °C for 25 min | gold | (20) |
| •pressure (tightly clamped) | |||
| plasma-assisted thermal bonding | •oxygen plasma | copper | (14) |
| •85 °C for 15 min | |||
| •pressure (0.002 MPa) | |||
| UV-assisted thermal bonding | •UV irradiation (8 min) | gold | (21) |
| •80 °C for 3 min | |||
| •pressure (0.00135 MPa) | |||
| UV/O3-assisted thermal bonding | •UV/O3 treatment (8 min) | gold | (35) |
| •80 °C for 5 min | |||
| •pressure (0.02 MPa) | |||
| solvent-assisted thermal bonding | •isopropanol | gold | (36) |
| •80 °C for 10 min | |||
| •pressure (0.0025 MPa) | |||
| UV-assisted solvent bonding | •acetic acid 50% | platinum | this work |
| •UV irradiation (30 s) | |||
| •pressure (using clamp) |