Table 3.

EcMscS and AtMSL1 and A320V have similar conductances and relative gating pressures.

	EcMscS	AtMSL1	AtMSL1 A320V
Conductance (nS)	1.02 ± 0.17	1.12 ± 0.16	0.98 ± 0.12
Relative gating pressure (Px/PMscL)	0.49 ± 0.16	0.63 ± 0.14	0.55 ± 0.15

Channel activities were triggered by application of 2.5 s symmetric pressure ramps at membrane potentials of −70 mV. Values are averages ± standard deviation. No difference in conductance or gating pressure relative to endogenous EcMscL was observed between wild-type AtMSL1 and A320V using one-way ANOVA followed by post hoc Tukey’s test, p < 0.05. N = 10 patches per variant. Source data are provided as a Source Data file.