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. 2020 Jul 24;11:3729. doi: 10.1038/s41467-020-17253-x

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a, b The temperature dependence of the longitudinal sheet resistance (R_S) of tetragonal (a) and hexagonal (b) FeTe devices with different thicknesses, respectively. c The magnetic field dependence of the Hall resistance (R_xy) at 1.5 K corresponding to 32 nm tetragonal FeTe and 30 nm hexagonal FeTe. d Temperature-dependent anomalous Hall effect (AHE) of the hexagonal FeTe with 30 nm. e AHE hysteresis loops of hexagonal FeTe devices with 30 and 4 nm measured at 100 K. f The coercive field of 4 nm hexagonal FeTe device as a function of the temperature.